Memory Server

Memory Capacity: 8GB Speed 3200MHz: (PC4-25600) Error Check: ECC Unbuffered Model/Series/Type: Server Premier Module Type: DIMM CAS Latency: CL22 Form Factor: DDR4 Rank: 1R (Single Rank) Pins: 288 Pin Memory Voltage: 1.2v Memory Depth: 1G Data Width: X72 Chip Organization: x8
Module Type: Unbuffered DIMM ECC Form Factor: Standard (1.18'' height) Memory Type: DDR3 Standard: JEDEC Interface: 240-pin Capacity: 2GB/4GB/8GB Speed: 1600MHz VDD Voltage: 1.35V Rank: 2 CAS Latency: CL11 Clock Rate: 800MHz Timing-Cycle Time: 1.25ns Refresh: Auto-refresh/Self-refresh Operation Temperature: TC=0? to 85? RoHS: Yes Intel Platform: Nehalem/Westmere, Sandy-Bridge AMD Platform: Interlagos/Valencia
8Gb ECC un-buffered DDR3-1600 CL11 1.35v/1.5v dual voltage 240pin Thermal sensor Lifetime warranty
4Gb ecc-Register with parity DDR3L-1600 CL11 single rank (512x8 ) 1.35v/1.5v dual voltage - 240pin lifetime warranty
Frequency: 1600MHz Pin Count: 240 Pin Capacity: 8GB Timing CL-tRCD-tRP-tRAS: 11-11-11-28 Voltage: 1.35V Rank Number: 1Rank/2Rank Heat Sink: No Operating Temp.: 0§C to +85§C Gold Finger Plating: 30 micro inch
8Gb ecc-Register with parity DDR3L-1600 CL11 Single rank (1024x4) 1.35v/1.5v dual voltage - 240pin Lifetime warranty
4GB 288-pin DIMM cL15 1.2V Single rank x4 Memory Technology:ÿDDR4
Dell Memory Upgrade - 8GB - 1RX8 DDR4 UDIMM 3200MHz
IN STOCK
R 1120
+
1 ž 8 GB DDR4 2666 MHz 288-pin DIMM
IN STOCK
R 1250
+
Component for: PC/server Internal memory: 4 GB Internal memory type: DDR4 Memory clock speed: 2666 MHz Memory form factor: 260-pin SO-DIMM Memory layout (modules x size): 1 x 4 GB
8G Ecc Registered Dual rank Parity check 4Gb x2 kit DDR2-800 240pin Lifetime warranty
4Gb x3 kit ecc-Register with parity DDR3-1600 CL11 Single rankÿ 1.5v - 240pin, with thermal sensor - lifetime warranty
? JEDEC standard 1.5V (1.425V ~1.575V) Power Supply ? VDDQ = 1.5V (1.425V ~ 1.575V) ? 933MHz fCK for 1866Mb/sec/pin ? 8 independent internal bank ? Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6 ? Programmable Additive Latency: 0, CL - 2, or CL - 1 clock ? 8-bit pre-fetch ? Burst Length: 8 (Interleave without any limit, sequential with starting address ?000? only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] ? Bi-directional Differential Data Strobe ? Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ñ 1%) ? On Die Termination using ODT pin ? On-DIMM thermal sensor (Grade B) ? Average Refresh Period 7.8us at lower than TCASE 85øC, 3.9us at 85øC < TCASE < 95øC ? Asynchronous Reset ? PCB : Height 1.180? (30.00mm), double sided component
32GB 2933MHz DDR4 ECC Reg Latency: CL21 DIMM Duel Rank: 2Rx4
4GB (4096MB) DDR2-667 CL5 Dual rank Registered w/Parity memory module 240-pin DIMM Gold contact fingers +1.8V
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